Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition

J. Su; M. Gherasimova; G. Cui; J. Han; S. Lim; D. Ciuparu; L. Pfefferle; Y. He; A. V. Nurmikko; C. Broadbridge; A. Lehman; T. Onuma; M. Kurimoto; S. F. Chichibu

Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition

J. Su, M. Gherasimova, G. Cui, J. Han, S. Lim, D. Ciuparu, L. Pfefferle, Y. He, A. V. Nurmikko, C. Broadbridge, A. Lehman, T. Onuma, M. Kurimoto, S. F. Chichibu

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Abstract

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E ₂ phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Original language	English
Article number	E12.4
Pages (from-to)	753-758
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	831
Publication status	Published - 2005
Event	2004 MRS Fall Meeting - Boston, MA, United States Duration: 2004 Nov 29 → 2004 Dec 1

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Su, J., Gherasimova, M., Cui, G., Han, J., Lim, S., Ciuparu, D., Pfefferle, L., He, Y., Nurmikko, A. V., Broadbridge, C., Lehman, A., Onuma, T., Kurimoto, M., & Chichibu, S. F. (2005). Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition. Materials Research Society Symposium Proceedings, 831, 753-758. Article E12.4.

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title = "Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition",

abstract = "We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.",

author = "J. Su and M. Gherasimova and G. Cui and J. Han and S. Lim and D. Ciuparu and L. Pfefferle and Y. He and Nurmikko, {A. V.} and C. Broadbridge and A. Lehman and T. Onuma and M. Kurimoto and Chichibu, {S. F.}",

year = "2005",

language = "English",

volume = "831",

pages = "753--758",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 01-12-2004",

}

TY - JOUR

T1 - Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition

AU - Su, J.

AU - Gherasimova, M.

AU - Cui, G.

AU - Han, J.

AU - Lim, S.

AU - Ciuparu, D.

AU - Pfefferle, L.

AU - He, Y.

AU - Nurmikko, A. V.

AU - Broadbridge, C.

AU - Lehman, A.

AU - Onuma, T.

AU - Kurimoto, M.

AU - Chichibu, S. F.

PY - 2005

Y1 - 2005

N2 - We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

AB - We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E 2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

UR - http://www.scopus.com/inward/record.url?scp=23844458231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844458231&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23844458231

SN - 0272-9172

VL - 831

SP - 753

EP - 758

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - E12.4

T2 - 2004 MRS Fall Meeting

Y2 - 29 November 2004 through 1 December 2004

ER -

Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition

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