Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Yoshihito Kunugi; Kazuo Takimiya; Yuta Toyoshima; Kazuo Yamashita; Yoshio Aso; Tetsuo Otsubo

doi:10.1039/b401209g

Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Yoshihito Kunugi, Kazuo Takimiya, Yuta Toyoshima, Kazuo Yamashita, Yoshio Aso, Tetsuo Otsubo

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.

Original language	English
Pages (from-to)	1367-1369
Number of pages	3
Journal	Journal of Materials Chemistry
Volume	14
Issue number	9
DOIs	https://doi.org/10.1039/b401209g
Publication status	Published - 2004 May 7
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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10.1039/b401209g

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@article{99504f376a254fcabf4ae0e8725a745a,

title = "Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors",

abstract = "n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.",

author = "Yoshihito Kunugi and Kazuo Takimiya and Yuta Toyoshima and Kazuo Yamashita and Yoshio Aso and Tetsuo Otsubo",

year = "2004",

month = may,

day = "7",

doi = "10.1039/b401209g",

language = "English",

volume = "14",

pages = "1367--1369",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "9",

}

TY - JOUR

T1 - Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

AU - Kunugi, Yoshihito

AU - Takimiya, Kazuo

AU - Toyoshima, Yuta

AU - Yamashita, Kazuo

AU - Aso, Yoshio

AU - Otsubo, Tetsuo

PY - 2004/5/7

Y1 - 2004/5/7

N2 - n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.

AB - n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.

UR - http://www.scopus.com/inward/record.url?scp=2442675102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442675102&partnerID=8YFLogxK

U2 - 10.1039/b401209g

DO - 10.1039/b401209g

M3 - Article

AN - SCOPUS:2442675102

SN - 0959-9428

VL - 14

SP - 1367

EP - 1369

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 9

ER -

Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Abstract

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