Variability analysis of scaled crystal channel and poly-Si channel FinFETs

Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The threshold voltage V t variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T ox has been systematically analyzed. By investigating the T ox dependence of V t variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin V t variations. Moreover, it was experimentally found that the standard V t deviation (σ V t) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length L g down to poly-Si grain size.

Original languageEnglish
Article number6127911
Pages (from-to)573-581
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2012 Mar


  • Crystal channel
  • fin-type metal-oxide-semiconductor field-effect transistor (FinFET)
  • gate work function
  • poly-Si channel
  • threshold voltage (V )
  • variability


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