Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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