Variability analysis of TiN metal-gate FinFETs

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the Vth in the FinFET occurs and the standard deviations of the Vth of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the Vth variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.

Original languageEnglish
Article number5460908
Pages (from-to)546-548
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2010 Jun
Externally publishedYes


  • FinFET
  • Metal gate (MG)
  • Variability
  • Work function (WF)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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