Variability analysis of TiN metal-gate FinFETs

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Hiromi Yamauchi; Meishoku Masahara

doi:10.1109/LED.2010.2047091

Variability analysis of TiN metal-gate FinFETs

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the V_th in the FinFET occurs and the standard deviations of the V_th of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the V_th variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.

Original language	English
Article number	5460908
Pages (from-to)	546-548
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2047091
Publication status	Published - 2010 Jun
Externally published	Yes

Keywords

FinFET
Metal gate (MG)
Variability
Work function (WF)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2047091

Cite this

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title = "Variability analysis of TiN metal-gate FinFETs",

abstract = "Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the Vth in the FinFET occurs and the standard deviations of the Vth of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the Vth variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.",

keywords = "FinFET, Metal gate (MG), Variability, Work function (WF)",

author = "Kazuhiko Endo and O'Uchi, {Shin Ichi} and Yuki Ishikawa and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Junichi Tsukada and Hiromi Yamauchi and Meishoku Masahara",

note = "Funding Information: Manuscript received February 2, 2010; revised March 15, 2010. Date of publication May 6, 2010; date of current version May 26, 2010. This work was supported in part by NEDO under the Development of Nanoelectronic Device Technology. The review of this letter was arranged by Editor L. Selmi. The authors are with the National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8568, Japan (e-mail: endo.k@aist.go.jp). Digital Object Identifier 10.1109/LED.2010.2047091",

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AU - Endo, Kazuhiko

AU - O'Uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received February 2, 2010; revised March 15, 2010. Date of publication May 6, 2010; date of current version May 26, 2010. This work was supported in part by NEDO under the Development of Nanoelectronic Device Technology. The review of this letter was arranged by Editor L. Selmi. The authors are with the National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8568, Japan (e-mail: endo.k@aist.go.jp). Digital Object Identifier 10.1109/LED.2010.2047091

PY - 2010/6

Y1 - 2010/6

N2 - Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the Vth in the FinFET occurs and the standard deviations of the Vth of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the Vth variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.

AB - Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the Vth in the FinFET occurs and the standard deviations of the Vth of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the Vth variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.

KW - FinFET

KW - Metal gate (MG)

KW - Variability

KW - Work function (WF)

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Variability analysis of TiN metal-gate FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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