Variability origins of FinFETs and perspective beyond 20nm node

Takashi Matsukawa; Yongxun Liu; Kazuhiko Endo; Shin Ichi O'uchi; Meishoku Masahara

doi:10.1109/SOI.2011.6081713

Variability origins of FinFETs and perspective beyond 20nm node

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Shin Ichi O'uchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

• WFV is dominant Vt variation source of FinFET for 20nm and beyond. • Parasitic resistance is one of the Ion variation sources as well as Vt. • WFV control is key issue to further exploit the potential variability robustness of undoped channel transistors (FDSOI and FinFETs).

Original language	English
Title of host publication	IEEE International SOI Conference, SOI 2011
DOIs	https://doi.org/10.1109/SOI.2011.6081713
Publication status	Published - 2011 Dec 20
Externally published	Yes
Event	2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States Duration: 2011 Oct 3 → 2011 Oct 6

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Other

Other	2011 IEEE International SOI Conference, SOI 2011
Country/Territory	United States
City	Tempe, AZ
Period	11/10/3 → 11/10/6

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SOI.2011.6081713

Cite this

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title = "Variability origins of FinFETs and perspective beyond 20nm node",

abstract = "• WFV is dominant Vt variation source of FinFET for 20nm and beyond. • Parasitic resistance is one of the Ion variation sources as well as Vt. • WFV control is key issue to further exploit the potential variability robustness of undoped channel transistors (FDSOI and FinFETs).",

author = "Takashi Matsukawa and Yongxun Liu and Kazuhiko Endo and O'uchi, {Shin Ichi} and Meishoku Masahara",

year = "2011",

month = dec,

day = "20",

doi = "10.1109/SOI.2011.6081713",

language = "English",

isbn = "9781612847597",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "IEEE International SOI Conference, SOI 2011",

note = "2011 IEEE International SOI Conference, SOI 2011 ; Conference date: 03-10-2011 Through 06-10-2011",

}

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T1 - Variability origins of FinFETs and perspective beyond 20nm node

AU - Matsukawa, Takashi

AU - Liu, Yongxun

AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Masahara, Meishoku

PY - 2011/12/20

Y1 - 2011/12/20

N2 - • WFV is dominant Vt variation source of FinFET for 20nm and beyond. • Parasitic resistance is one of the Ion variation sources as well as Vt. • WFV control is key issue to further exploit the potential variability robustness of undoped channel transistors (FDSOI and FinFETs).

AB - • WFV is dominant Vt variation source of FinFET for 20nm and beyond. • Parasitic resistance is one of the Ion variation sources as well as Vt. • WFV control is key issue to further exploit the potential variability robustness of undoped channel transistors (FDSOI and FinFETs).

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U2 - 10.1109/SOI.2011.6081713

DO - 10.1109/SOI.2011.6081713

M3 - Conference contribution

AN - SCOPUS:83455206174

SN - 9781612847597

T3 - Proceedings - IEEE International SOI Conference

BT - IEEE International SOI Conference, SOI 2011

T2 - 2011 IEEE International SOI Conference, SOI 2011

Y2 - 3 October 2011 through 6 October 2011

ER -

Variability origins of FinFETs and perspective beyond 20nm node

Abstract

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