Variability origins of parasitic resistance in finFETs with silicided source/drain

Takashi Matsukawa; Yongxun Liu; Kazuhiko Endo; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Shinichi O'Uchi; Kunihiro Sakamoto; Meishoku Masahara

doi:10.1109/LED.2012.2182755

Variability origins of parasitic resistance in finFETs with silicided source/drain

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'Uchi, Kunihiro Sakamoto, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Origins of parasitic resistance R _para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R _ext reflecting fin thickness T _fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R _para on average, it causes additional fluctuation of R _para. Analyzing the correlation of the R _para fluctuation with the fluctuation in T _fin and the lateral growth of NiSi, the dominant origin of the R _para fluctuation is specified to be the NiSi/n ⁺-Si contact resistance.

Original language	English
Article number	6151016
Pages (from-to)	474-476
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2012.2182755
Publication status	Published - 2012 Apr

Keywords

Fin-shaped FET (FinFET)
NiSi
parasitic resistance (R )
scaling
source/drain (S/D)
variability

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10.1109/LED.2012.2182755

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title = "Variability origins of parasitic resistance in finFETs with silicided source/drain",

abstract = "Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.",

keywords = "Fin-shaped FET (FinFET), NiSi, parasitic resistance (R ), scaling, source/drain (S/D), variability",

author = "Takashi Matsukawa and Yongxun Liu and Kazuhiko Endo and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Shinichi O'Uchi and Kunihiro Sakamoto and Meishoku Masahara",

note = "Funding Information: Manuscript received December 14, 2011; revised December 26, 2011; accepted December 31, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported in part by New Energy and Industrial Technology Development Organization (NEDO) under the Development of Nanoelectronics Devices Technology. The review of this letter was arranged by Editor M. {\"O}stling.",

year = "2012",

month = apr,

doi = "10.1109/LED.2012.2182755",

language = "English",

volume = "33",

pages = "474--476",

journal = "IEEE Electron Device Letters",

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AU - Matsukawa, Takashi

AU - Liu, Yongxun

AU - Endo, Kazuhiko

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - O'Uchi, Shinichi

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received December 14, 2011; revised December 26, 2011; accepted December 31, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported in part by New Energy and Industrial Technology Development Organization (NEDO) under the Development of Nanoelectronics Devices Technology. The review of this letter was arranged by Editor M. Östling.

PY - 2012/4

Y1 - 2012/4

N2 - Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.

AB - Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.

KW - Fin-shaped FET (FinFET)

KW - NiSi

KW - parasitic resistance (R )

KW - scaling

KW - source/drain (S/D)

KW - variability

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Variability origins of parasitic resistance in finFETs with silicided source/drain

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Keywords

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