@inproceedings{1258303b1fe8489cab67bf26e748f6b9,
title = "Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration",
abstract = "Tunnel-FETs (TFETs) and MOSFETs are fabricated on a single SOI substrate using the same device parameters and process conditions, and the variation behavior of TFETs is studied by highlighting the difference with MOSFETs. It is found that the variation behavior characteristic to TFET is mainly caused by two factors. One is the dopant concentration at source region. It seems to affect to the uniformity of tunneling current along the channel width. A heavier source concentration is necessary to suppress the variation. Another factor is the channel edge configuration. Electric fields are easily concentrated at channel edge regions, and it lowers the threshold voltage of TFETs locally. It brings about an asymmetric variation behavior. Suppression of these factors is indispensable for the integration of TFET circuits.",
keywords = "tunnel-FET, variation",
author = "S. Migita and T. Matsukawa and T. Mori and K. Fukuda and Y. Morita and W. Mizubayashi and K. Endo and Y. Liu and S. O'Uchi and M. Masahara and H. Ota",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 44th European Solid-State Device Research Conference, ESSDERC 2014 ; Conference date: 22-09-2014 Through 26-09-2014",
year = "2014",
month = nov,
day = "5",
doi = "10.1109/ESSDERC.2014.6948814",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "278--281",
editor = "Roberto Bez and Paolo Pavan and Gaudenzio Meneghesso",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
}