Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

S. Migita, T. Matsukawa, T. Mori, K. Fukuda, Y. Morita, W. Mizubayashi, K. Endo, Y. Liu, S. O'Uchi, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration'. Together they form a unique fingerprint.

Engineering