Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2

Hiraku Nagatani; Yuki Mizuno; Issei Suzuki; Masao Kita; Naoki Ohashi; Takahisa Omata

doi:10.1063/1.4985700

Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O₂

Hiraku Nagatani, Yuki Mizuno, Issei Suzuki, Masao Kita, Naoki Ohashi, Takahisa Omata

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Band-gap engineering of β-CuGaO₂ was demonstrated by the alloying of gallium with aluminum, that is, Cu(Ga_1-_xAl_x)O₂. The ternary wurtzite β-NaFeO₂-type alloys were obtained in the range 0 ≤ x ≤ 0.7, and γ-LiAlO₂-type phase appeared in the range 0.7 ≤ x ≤ 1. The energy band gap of wurtzite β-CuGaO₂ was controlled in the range between 1.47 and 2.09 eV. A direct band gap for x < 0.6 and indirect band gap for x ≥ 0.6 were proposed based on the structural distortion in the β-NaFeO₂-type phase and density functional theory (DFT) calculation of β-CuAlO₂. The DFT calculation also indicated that the γ-LiAlO₂-type phases appeared in 0.7 ≤ x ≤ 1 are also indirect-gap semiconductors.

Original language	English
Article number	235103
Journal	Journal of Applied Physics
Volume	121
Issue number	23
DOIs	https://doi.org/10.1063/1.4985700
Publication status	Published - 2017 Jun 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2",

abstract = "Band-gap engineering of β-CuGaO2 was demonstrated by the alloying of gallium with aluminum, that is, Cu(Ga1-xAlx)O2. The ternary wurtzite β-NaFeO2-type alloys were obtained in the range 0 ≤ x ≤ 0.7, and γ-LiAlO2-type phase appeared in the range 0.7 ≤ x ≤ 1. The energy band gap of wurtzite β-CuGaO2 was controlled in the range between 1.47 and 2.09 eV. A direct band gap for x < 0.6 and indirect band gap for x ≥ 0.6 were proposed based on the structural distortion in the β-NaFeO2-type phase and density functional theory (DFT) calculation of β-CuAlO2. The DFT calculation also indicated that the γ-LiAlO2-type phases appeared in 0.7 ≤ x ≤ 1 are also indirect-gap semiconductors.",

author = "Hiraku Nagatani and Yuki Mizuno and Issei Suzuki and Masao Kita and Naoki Ohashi and Takahisa Omata",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research of Challenging Exploratory Research (Grant No. 25630283), Grant-in-Aid for Scientific Research (B) (Grant No. 26289239), Grant-in-Aid for Scientific Research (A) (Grant No. 17H01315), and Grants-in-Aid for JSPS Fellows (Grant Nos. 26763 and 15J00261). We thank Mr. Masahiro Sakai, of Panasonic Corp., for his help with the XPS experiments. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

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day = "21",

doi = "10.1063/1.4985700",

language = "English",

volume = "121",

journal = "Journal of Applied Physics",

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T1 - Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2

AU - Nagatani, Hiraku

AU - Mizuno, Yuki

AU - Suzuki, Issei

AU - Kita, Masao

AU - Ohashi, Naoki

AU - Omata, Takahisa

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research of Challenging Exploratory Research (Grant No. 25630283), Grant-in-Aid for Scientific Research (B) (Grant No. 26289239), Grant-in-Aid for Scientific Research (A) (Grant No. 17H01315), and Grants-in-Aid for JSPS Fellows (Grant Nos. 26763 and 15J00261). We thank Mr. Masahiro Sakai, of Panasonic Corp., for his help with the XPS experiments. Publisher Copyright: © 2017 Author(s).

PY - 2017/6/21

Y1 - 2017/6/21

N2 - Band-gap engineering of β-CuGaO2 was demonstrated by the alloying of gallium with aluminum, that is, Cu(Ga1-xAlx)O2. The ternary wurtzite β-NaFeO2-type alloys were obtained in the range 0 ≤ x ≤ 0.7, and γ-LiAlO2-type phase appeared in the range 0.7 ≤ x ≤ 1. The energy band gap of wurtzite β-CuGaO2 was controlled in the range between 1.47 and 2.09 eV. A direct band gap for x < 0.6 and indirect band gap for x ≥ 0.6 were proposed based on the structural distortion in the β-NaFeO2-type phase and density functional theory (DFT) calculation of β-CuAlO2. The DFT calculation also indicated that the γ-LiAlO2-type phases appeared in 0.7 ≤ x ≤ 1 are also indirect-gap semiconductors.

AB - Band-gap engineering of β-CuGaO2 was demonstrated by the alloying of gallium with aluminum, that is, Cu(Ga1-xAlx)O2. The ternary wurtzite β-NaFeO2-type alloys were obtained in the range 0 ≤ x ≤ 0.7, and γ-LiAlO2-type phase appeared in the range 0.7 ≤ x ≤ 1. The energy band gap of wurtzite β-CuGaO2 was controlled in the range between 1.47 and 2.09 eV. A direct band gap for x < 0.6 and indirect band gap for x ≥ 0.6 were proposed based on the structural distortion in the β-NaFeO2-type phase and density functional theory (DFT) calculation of β-CuAlO2. The DFT calculation also indicated that the γ-LiAlO2-type phases appeared in 0.7 ≤ x ≤ 1 are also indirect-gap semiconductors.

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Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O₂

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