ZnO-Pr6O11 varistors exhibit non-ohmic current-voltage characteristics due to the double Schottky barrier formed at the interface between ZnO grains and intergranular phases of Pr6O11. In this paper, the I-V characteristic of ZnO/Pr6O11 multilayered films with different thickness fabricated by pulsed laser ablation method are studied. In spite of decreasing the film thickness, the films with 5000-500 angstrom thickness exhibit nonlinear I-V characteristic. The values of breakdown voltage (Vb) and non-linear coefficient (α) are estimated as Vb=0.19-0.30V, α=2.5-4.1. Therefore, thin ZnO/Pr6O11 multilayered films prepared by PLD method show lower breakdown voltage.
|Number of pages||5|
|Journal||Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy|
|Publication status||Published - 1999 Aug|