Varistor properties of ZnO/Pr6O11 multilayered composites prepared by pulsed laser ablation method

Satoshi Sugiyama; Atsunori Kamegawa; Hitoshi Takamura; Masuo Okada

doi:10.2497/jjspm.46.811

Varistor properties of ZnO/Pr₆O₁₁ multilayered composites prepared by pulsed laser ablation method

Satoshi Sugiyama, Atsunori Kamegawa, Hitoshi Takamura, Masuo Okada

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnO-Pr₆O₁₁ varistors exhibit non-ohmic current-voltage characteristics due to the double Schottky barrier formed at the interface between ZnO grains and intergranular phases of Pr₆O₁₁. In this paper, the I-V characteristic of ZnO/Pr₆O₁₁ multilayered films with different thickness fabricated by pulsed laser ablation method are studied. In spite of decreasing the film thickness, the films with 5000-500 angstrom thickness exhibit nonlinear I-V characteristic. The values of breakdown voltage (V_b) and non-linear coefficient (α) are estimated as V_b=0.19-0.30V, α=2.5-4.1. Therefore, thin ZnO/Pr₆O₁₁ multilayered films prepared by PLD method show lower breakdown voltage.

Original language	English
Pages (from-to)	811-815
Number of pages	5
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	46
Issue number	8
DOIs	https://doi.org/10.2497/jjspm.46.811
Publication status	Published - 1999 Aug

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title = "Varistor properties of ZnO/Pr6O11 multilayered composites prepared by pulsed laser ablation method",

abstract = "ZnO-Pr6O11 varistors exhibit non-ohmic current-voltage characteristics due to the double Schottky barrier formed at the interface between ZnO grains and intergranular phases of Pr6O11. In this paper, the I-V characteristic of ZnO/Pr6O11 multilayered films with different thickness fabricated by pulsed laser ablation method are studied. In spite of decreasing the film thickness, the films with 5000-500 angstrom thickness exhibit nonlinear I-V characteristic. The values of breakdown voltage (Vb) and non-linear coefficient (α) are estimated as Vb=0.19-0.30V, α=2.5-4.1. Therefore, thin ZnO/Pr6O11 multilayered films prepared by PLD method show lower breakdown voltage.",

author = "Satoshi Sugiyama and Atsunori Kamegawa and Hitoshi Takamura and Masuo Okada",

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AU - Sugiyama, Satoshi

AU - Kamegawa, Atsunori

AU - Takamura, Hitoshi

AU - Okada, Masuo

PY - 1999/8

Y1 - 1999/8

N2 - ZnO-Pr6O11 varistors exhibit non-ohmic current-voltage characteristics due to the double Schottky barrier formed at the interface between ZnO grains and intergranular phases of Pr6O11. In this paper, the I-V characteristic of ZnO/Pr6O11 multilayered films with different thickness fabricated by pulsed laser ablation method are studied. In spite of decreasing the film thickness, the films with 5000-500 angstrom thickness exhibit nonlinear I-V characteristic. The values of breakdown voltage (Vb) and non-linear coefficient (α) are estimated as Vb=0.19-0.30V, α=2.5-4.1. Therefore, thin ZnO/Pr6O11 multilayered films prepared by PLD method show lower breakdown voltage.

AB - ZnO-Pr6O11 varistors exhibit non-ohmic current-voltage characteristics due to the double Schottky barrier formed at the interface between ZnO grains and intergranular phases of Pr6O11. In this paper, the I-V characteristic of ZnO/Pr6O11 multilayered films with different thickness fabricated by pulsed laser ablation method are studied. In spite of decreasing the film thickness, the films with 5000-500 angstrom thickness exhibit nonlinear I-V characteristic. The values of breakdown voltage (Vb) and non-linear coefficient (α) are estimated as Vb=0.19-0.30V, α=2.5-4.1. Therefore, thin ZnO/Pr6O11 multilayered films prepared by PLD method show lower breakdown voltage.

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Varistor properties of ZnO/Pr₆O₁₁ multilayered composites prepared by pulsed laser ablation method

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