TY - GEN
T1 - Verification of the governing parameter for electromigration damage in passivated polycrystalline line
AU - Sasagawa, Kazuhiko
AU - Hasegawa, Masataka
AU - Saka, Masumi
AU - Abé, Hiroyuki
PY - 2001
Y1 - 2001
N2 - Due to electromigration, mechanical stress (atomic density) gradient appears in the passivated lines, and plays an important part in electromigration mechanism. Recently, a governing parameter, AFD* gen, for electromigration damage in the passivated polycrystalline lines was formulated. The formulation was carried out by adding the effect of atomic density gradient to the governing parameter, AFDgen, for electromigration damage in unpassivated polycrystalline and bamboo lines, which has been proposed and utilized to construct a method for failure prediction in these lines. In this paper, the passivated polycrystalline lines with two different lengths are treated. Both are straight shaped lines, which are made of the same Al film. But, they are different in line length. The characteristics in each line are obtained using the AFD* gen-based method for determination of film characteristics. The usefulness of AFD*gen is verified through the comparison of the film characteristics obtained for these two kinds of lines.
AB - Due to electromigration, mechanical stress (atomic density) gradient appears in the passivated lines, and plays an important part in electromigration mechanism. Recently, a governing parameter, AFD* gen, for electromigration damage in the passivated polycrystalline lines was formulated. The formulation was carried out by adding the effect of atomic density gradient to the governing parameter, AFDgen, for electromigration damage in unpassivated polycrystalline and bamboo lines, which has been proposed and utilized to construct a method for failure prediction in these lines. In this paper, the passivated polycrystalline lines with two different lengths are treated. Both are straight shaped lines, which are made of the same Al film. But, they are different in line length. The characteristics in each line are obtained using the AFD* gen-based method for determination of film characteristics. The usefulness of AFD*gen is verified through the comparison of the film characteristics obtained for these two kinds of lines.
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M3 - Conference contribution
AN - SCOPUS:0347569240
SN - 0791835405
T3 - Advances in Electronic Packaging
SP - 1531
EP - 1539
BT - Advances in Electronic Packaging; Manufacturing, Microelectronics Systems Systems and Exploratory Topics, Optoelectronics and Photonic Packaging
T2 - Advances in Electronic Packaging
Y2 - 8 July 2001 through 13 July 2001
ER -