Vertical double-gate mosfet device technology

Meishoku Masahara; Yongxun Liu; Kazuhiko Endo; Takashi Matsukawa; Eiichi Suzuki

doi:10.1002/ecj.10021

Vertical double-gate mosfet device technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits.

Original language	English
Pages (from-to)	46-51
Number of pages	6
Journal	Electronics and Communications in Japan
Volume	91
Issue number	1
DOIs	https://doi.org/10.1002/ecj.10021
Publication status	Published - 2008 Jan

Keywords

4-terminal DG-MOSFET
IBRE
SCE
Threshold control
Vertical-type DG-MOSFET

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10.1002/ecj.10021

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AU - Masahara, Meishoku

AU - Liu, Yongxun

AU - Endo, Kazuhiko

AU - Matsukawa, Takashi

AU - Suzuki, Eiichi

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N2 - Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits.

AB - Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits.

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Vertical double-gate mosfet device technology

Abstract

Keywords

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