Vertical double-gate mosfet device technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits.

Original languageEnglish
Pages (from-to)46-51
Number of pages6
JournalElectronics and Communications in Japan
Issue number1
Publication statusPublished - 2008 Jan


  • 4-terminal DG-MOSFET
  • IBRE
  • SCE
  • Threshold control
  • Vertical-type DG-MOSFET


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