Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

S. Marcet; K. Ohtani; H. Ohno

doi:10.1063/1.3360212

Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

S. Marcet, K. Ohtani, H. Ohno

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Abstract

The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15-30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton-biexciton cascaded emission.

Original language	English
Article number	101117
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3360212
Publication status	Published - 2010

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title = "Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot",

abstract = "The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15-30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton-biexciton cascaded emission.",

author = "S. Marcet and K. Ohtani and H. Ohno",

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AU - Ohno, H.

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N2 - The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15-30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton-biexciton cascaded emission.

AB - The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15-30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton-biexciton cascaded emission.

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DO - 10.1063/1.3360212

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Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

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