Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons

Mohsen Ghali; Keita Ohtani; Yuzo Ohno; Hideo Ohno

doi:10.1143/JJAP.51.06FE14

Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons

Mohsen Ghali, Keita Ohtani, Yuzo Ohno, Hideo Ohno

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Abstract

We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al _0.3Ga _0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.

Original language	English
Article number	06FE14
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	6 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.06FE14
Publication status	Published - 2012 Jun

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abstract = "We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.",

author = "Mohsen Ghali and Keita Ohtani and Yuzo Ohno and Hideo Ohno",

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T1 - Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons

AU - Ghali, Mohsen

AU - Ohtani, Keita

AU - Ohno, Yuzo

AU - Ohno, Hideo

PY - 2012/6

Y1 - 2012/6

N2 - We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.

AB - We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 PART 2

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Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons

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