@inproceedings{81b6d4cedd86453aaf0f63e3ad2d6bfd,
title = "Vertical hot-electron graphene-base transistors as resonant plasmonic terahertz detectors",
abstract = "We evaluate the operation of vertical hot-electron graphene-base transistors (HET-GBTs) as detectors of terahertz (THz) radiation using the developed device model. The model accounts for the carrier statistics, tunneling injection from the emitter, electron propagation across the barrier layer with partial capture into the graphene-layer (GL) base, and the self-consistent plasma oscillations of the electric potential and the hole density in the GL-base. The calculated responsivity of the HET-GBT THz detectors as a function of the signal frequency exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The HET-GBTs can compete with and even surpass other plasmonic THz detectors.",
keywords = "Detector, Graphene, Hot-electron transistor, Plasma oscillations, Terahertz",
author = "Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji and Shur, {Michael S.}",
note = "Funding Information: ACKNOWLEDGMENTS This work was supported by the JSPS, Japan (Grant-in-Aid for Specially Promoting Research #23000008). The work at RPI was supported by the US Army Cooperative Research Agreement. Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 ; Conference date: 02-11-2015 Through 04-11-2015",
year = "2015",
month = dec,
day = "17",
doi = "10.1109/COMCAS.2015.7360418",
language = "English",
series = "2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015",
address = "United States",
}