The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.
|Number of pages
|Journal of Crystal Growth
|Published - 1999 May
|Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 31 → 1998 Sept 4