Very wide spectrum multiquantum well superluminescent diode at 1·5 μm

S. Kondo; H. Yasaka; Y. Noguchi; K. Magari; M. Sugo; O. Mikami

doi:10.1049/el:19920082

Very wide spectrum multiquantum well superluminescent diode at 1·5 μm

S. Kondo, H. Yasaka, Y. Noguchi, K. Magari, M. Sugo, O. Mikami

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Abstract

An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at l·5 μ m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170nm, which gives a calculated coherence length of 13 μ m, approximately one third that of 1·5 μ m conventionally available bulk SLDs.

Original language	English
Pages (from-to)	132-133
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1049/el:19920082
Publication status	Published - 1992 Jan 16

Keywords

Diodes
Luminescent devices
Semiconductor devices and materials

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10.1049/el:19920082

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abstract = "An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at l·5 μ m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170nm, which gives a calculated coherence length of 13 μ m, approximately one third that of 1·5 μ m conventionally available bulk SLDs.",

keywords = "Diodes, Luminescent devices, Semiconductor devices and materials",

author = "S. Kondo and H. Yasaka and Y. Noguchi and K. Magari and M. Sugo and O. Mikami",

year = "1992",

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T1 - Very wide spectrum multiquantum well superluminescent diode at 1·5 μm

AU - Kondo, S.

AU - Yasaka, H.

AU - Noguchi, Y.

AU - Magari, K.

AU - Sugo, M.

AU - Mikami, O.

PY - 1992/1/16

Y1 - 1992/1/16

N2 - An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at l·5 μ m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170nm, which gives a calculated coherence length of 13 μ m, approximately one third that of 1·5 μ m conventionally available bulk SLDs.

AB - An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at l·5 μ m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170nm, which gives a calculated coherence length of 13 μ m, approximately one third that of 1·5 μ m conventionally available bulk SLDs.

KW - Diodes

KW - Luminescent devices

KW - Semiconductor devices and materials

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EP - 133

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Very wide spectrum multiquantum well superluminescent diode at 1·5 μm

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Keywords

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