VIA-6 Comparison of Side-Gating Behavior Between InP MISFET's and GaAs MESFET's

H. Hasegawa; T. Kitagawa; H. Masuda; H. Ohno

doi:10.1109/T-ED.1985.22373

VIA-6 Comparison of Side-Gating Behavior Between InP MISFET's and GaAs MESFET's

H. Hasegawa, T. Kitagawa, H. Masuda, H. Ohno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2552-2553
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1985.22373
Publication status	Published - 1985 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1985.22373

Cite this

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title = "VIA-6 Comparison of Side-Gating Behavior Between InP MISFET's and GaAs MESFET's",

author = "H. Hasegawa and T. Kitagawa and H. Masuda and H. Ohno",

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AU - Ohno, H.

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VIA-6 Comparison of Side-Gating Behavior Between InP MISFET's and GaAs MESFET's

ASJC Scopus subject areas

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