VIA-6 Comparison of Side-Gating Behavior Between InP MISFET's and GaAs MESFET's

H. Hasegawa, T. Kitagawa, H. Masuda, H. Ohno

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2552-2553
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1985 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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