Visualization of single atomic steps on an ultra-flat Si(100) surface by advanced differential interference contrast microscopy

Shin Ichiro Kobayashi; Youn Geun Kim; Rui Wen; Kohei Yasuda; Hirokazu Fukidome; Tomoyuki Suwa; Rihito Kuroda; Xiang Li; Akinobu Teramoto; Tadahiro Ohmi; Kingo Itaya

doi:10.1149/1.3597657

Visualization of single atomic steps on an ultra-flat Si(100) surface by advanced differential interference contrast microscopy

Shin Ichiro Kobayashi, Youn Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome, Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, Kingo Itaya

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

It is revealed for the first time that single atomic steps with a height of 0.14 nm on a Si(100) surface in air can be clearly distinguished by using a laser confocal microscope combined with an advanced differential interference contrast microscope (LCM-DIM). Images of LCM-DIM were acquired in wider areas than 100 m² within a shorter period of time than a few second. Furthermore, even in electrolyte solutions, the single atomic step can be seen by the new technique, which will be able to apply to the evaluation of dynamic processes of chemical and electrochemical etching of Si surfaces.

Original language	English
Pages (from-to)	H351-H353
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3597657
Publication status	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3597657

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abstract = "It is revealed for the first time that single atomic steps with a height of 0.14 nm on a Si(100) surface in air can be clearly distinguished by using a laser confocal microscope combined with an advanced differential interference contrast microscope (LCM-DIM). Images of LCM-DIM were acquired in wider areas than 100 m2 within a shorter period of time than a few second. Furthermore, even in electrolyte solutions, the single atomic step can be seen by the new technique, which will be able to apply to the evaluation of dynamic processes of chemical and electrochemical etching of Si surfaces.",

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AU - Kobayashi, Shin Ichiro

AU - Kim, Youn Geun

AU - Wen, Rui

AU - Yasuda, Kohei

AU - Fukidome, Hirokazu

AU - Suwa, Tomoyuki

AU - Kuroda, Rihito

AU - Li, Xiang

AU - Teramoto, Akinobu

AU - Ohmi, Tadahiro

AU - Itaya, Kingo

PY - 2011

Y1 - 2011

N2 - It is revealed for the first time that single atomic steps with a height of 0.14 nm on a Si(100) surface in air can be clearly distinguished by using a laser confocal microscope combined with an advanced differential interference contrast microscope (LCM-DIM). Images of LCM-DIM were acquired in wider areas than 100 m2 within a shorter period of time than a few second. Furthermore, even in electrolyte solutions, the single atomic step can be seen by the new technique, which will be able to apply to the evaluation of dynamic processes of chemical and electrochemical etching of Si surfaces.

AB - It is revealed for the first time that single atomic steps with a height of 0.14 nm on a Si(100) surface in air can be clearly distinguished by using a laser confocal microscope combined with an advanced differential interference contrast microscope (LCM-DIM). Images of LCM-DIM were acquired in wider areas than 100 m2 within a shorter period of time than a few second. Furthermore, even in electrolyte solutions, the single atomic step can be seen by the new technique, which will be able to apply to the evaluation of dynamic processes of chemical and electrochemical etching of Si surfaces.

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Visualization of single atomic steps on an ultra-flat Si(100) surface by advanced differential interference contrast microscopy

Abstract

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