TY - GEN
T1 - Voltage and Frequency Dependence of Capacitance Characteristics in Organic MOS Capacitors
AU - Kimura, Yoshinari
AU - Hattori, Yoshiaki
AU - Kitamura, Masatoshi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - Pentacene metal-oxide-semiconductor capacitors having a channel area uncovered with the top electrode have been examined by capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements. The C-V and C-f characteristics were reproduced using an equivalent circuit based on a distributed constant circuit. The sheet resistance, which characterizes carrier transport in the pentacene film, was obtained as a sheet resistance included in the equivalent circuit reproducing the measured characteristics.
AB - Pentacene metal-oxide-semiconductor capacitors having a channel area uncovered with the top electrode have been examined by capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements. The C-V and C-f characteristics were reproduced using an equivalent circuit based on a distributed constant circuit. The sheet resistance, which characterizes carrier transport in the pentacene film, was obtained as a sheet resistance included in the equivalent circuit reproducing the measured characteristics.
KW - C-V characteristics
KW - C-f characteristics
KW - organic MOS capacitors
KW - pentacene
UR - http://www.scopus.com/inward/record.url?scp=85072960089&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072960089&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2019.8819249
DO - 10.1109/ICIPRM.2019.8819249
M3 - Conference contribution
AN - SCOPUS:85072960089
T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Compound Semiconductor Week, CSW 2019
Y2 - 19 May 2019 through 23 May 2019
ER -