Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

N. Tezuka; S. Oikawa; M. Matsuura; S. Sugimoto; K. Nishimura; T. Irisawa; Y. Nagamine; K. Tsunekawa

doi:10.1063/1.5006398

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

N. Tezuka, S. Oikawa, M. Matsuura, S. Sugimoto, K. Nishimura, T. Irisawa, Y. Nagamine, K. Tsunekawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Original language	English
Article number	055922
Journal	AIP Advances
Volume	8
Issue number	5
DOIs	https://doi.org/10.1063/1.5006398
Publication status	Published - 2018 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.5006398

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title = "Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy",

abstract = "The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.",

author = "N. Tezuka and S. Oikawa and M. Matsuura and S. Sugimoto and K. Nishimura and T. Irisawa and Y. Nagamine and K. Tsunekawa",

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T1 - Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

AU - Tezuka, N.

AU - Oikawa, S.

AU - Matsuura, M.

AU - Sugimoto, S.

AU - Nishimura, K.

AU - Irisawa, T.

AU - Nagamine, Y.

AU - Tsunekawa, K.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

AB - The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

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U2 - 10.1063/1.5006398

DO - 10.1063/1.5006398

M3 - Article

AN - SCOPUS:85040763634

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 055922

ER -

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

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