Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

Takayuki Nozaki; Masaki Endo; Masahito Tsujikawa; Tatsuya Yamamoto; Tomohiro Nozaki; Makoto Konoto; Hiroyuki Ohmori; Yutaka Higo; Hitoshi Kubota; Akio Fukushima; Masanori Hosomi; Masafumi Shirai; Yoshishige Suzuki; Shinji Yuasa

doi:10.1063/1.5132626

Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

Takayuki Nozaki, Masaki Endo, Masahito Tsujikawa, Tatsuya Yamamoto, Tomohiro Nozaki, Makoto Konoto, Hiroyuki Ohmori, Yutaka Higo, Hitoshi Kubota, Akio Fukushima, Masanori Hosomi, Masafumi Shirai, Yoshishige Suzuki, Shinji Yuasa

RIEC - Computing System Platforms Division

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a Co_xFe_1-x termination layer. The VCMA effect depends on the concentration of the Co_xFe_1-x alloy, and a large VCMA coefficient, as high as -350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

Original language	English
Article number	011108
Journal	APL Materials
Volume	8
Issue number	1
DOIs	https://doi.org/10.1063/1.5132626
Publication status	Published - 2020 Jan 1

Access to Document

10.1063/1.5132626

Cite this

@article{aacc4ba084e14b158e801e3f9997214d,

title = "Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer",

abstract = "We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1-x termination layer. The VCMA effect depends on the concentration of the CoxFe1-x alloy, and a large VCMA coefficient, as high as -350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.",

author = "Takayuki Nozaki and Masaki Endo and Masahito Tsujikawa and Tatsuya Yamamoto and Tomohiro Nozaki and Makoto Konoto and Hiroyuki Ohmori and Yutaka Higo and Hitoshi Kubota and Akio Fukushima and Masanori Hosomi and Masafumi Shirai and Yoshishige Suzuki and Shinji Yuasa",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = jan,

day = "1",

doi = "10.1063/1.5132626",

language = "English",

volume = "8",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

AU - Nozaki, Takayuki

AU - Endo, Masaki

AU - Tsujikawa, Masahito

AU - Yamamoto, Tatsuya

AU - Nozaki, Tomohiro

AU - Konoto, Makoto

AU - Ohmori, Hiroyuki

AU - Higo, Yutaka

AU - Kubota, Hitoshi

AU - Fukushima, Akio

AU - Hosomi, Masanori

AU - Shirai, Masafumi

AU - Suzuki, Yoshishige

AU - Yuasa, Shinji

PY - 2020/1/1

Y1 - 2020/1/1

N2 - We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1-x termination layer. The VCMA effect depends on the concentration of the CoxFe1-x alloy, and a large VCMA coefficient, as high as -350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

AB - We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1-x termination layer. The VCMA effect depends on the concentration of the CoxFe1-x alloy, and a large VCMA coefficient, as high as -350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

UR - http://www.scopus.com/inward/record.url?scp=85077982192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077982192&partnerID=8YFLogxK

U2 - 10.1063/1.5132626

DO - 10.1063/1.5132626

M3 - Article

AN - SCOPUS:85077982192

SN - 2166-532X

VL - 8

JO - APL Materials

JF - APL Materials

IS - 1

M1 - 011108

ER -

Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this