WA-B8 Double-Heterostructure Ga0.47In0.53 As MESFET's

H. Ohno; J. Barnard; C. E.C. Wood; L. F. Eastman

doi:10.1109/T-ED.1980.20235

WA-B8 Double-Heterostructure Ga_0.47In_0.53 As MESFET's

H. Ohno, J. Barnard, C. E.C. Wood, L. F. Eastman

Leadership

Cornell University

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2198
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	27
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1980.20235
Publication status	Published - 1980 Nov

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Cite this

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title = "WA-B8 Double-Heterostructure Ga0.47In0.53 As MESFET's",

author = "H. Ohno and J. Barnard and Wood, {C. E.C.} and Eastman, {L. F.}",

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WA-B8 Double-Heterostructure Ga0.47In0.53 As MESFET's

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WA-B8 Double-Heterostructure Ga_0.47In_0.53 As MESFET's