Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues

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61 Citations (Scopus)


This paper reviews wafer-level hermetic packaging technology using anodic bonding from several reliability points of view. First, reliability risk factors of high temperature, high voltage and electrochemical O2 generation during anodic bonding are discussed. Next, electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed. The reliability of both hermetic sealing and electrical feedthrough must be simultaneously satisfied. In the last part of this paper, a new wafer-level MEMS packaging material, anodically-bondable low temperature cofired ceramic (LTCC) wafer, is introduced, and its reliability data on hermetic sealing, electrical interconnection and flip-chip mounting on a printed circuit board (PCB) are described.

Original languageEnglish
Pages (from-to)875-881
Number of pages7
JournalMicroelectronics Reliability
Issue number5
Publication statusPublished - 2014 May


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