@inproceedings{6f85d506a73b4096a1610b837e42537a,
title = "Wafer-level selective transfer method for FBAR-LSI Integration",
abstract = "This paper reports the wafer-bonding-based integration of heterogeneous devices with different die sizes by laser-assisted selective device transfer technique. 1 mm × 1 mm FBAR (film bulk acoustic resonator) dies supported with a glass wafer were selectively transferred to a wafer of 2 mm × 2 mm BiCMOS sustaining amplifiers by low temperature Au-Au bonding. The FBAR dies left on the support glass wafer were transferred to other BiCMOS wafers, and 4 times of integration were done in total using the same FBAR wafer. The integrated device worked as a chip-size-packaged 2 GHz timing oscillator, and a phase noise of -103 dBc/Hz at 10 kHz offset and -155 dBc/Hz at 1 MHz offset was confirmed.",
keywords = "Au-Au bonding, FBAR oscillator, Integration, Selective transfer, Wafer-level packaging",
author = "Kousuke Hikichi and Kazushi Seiyama and Masanori Ueda and Shinji Taniguchi and Hashimoto, {Ken Ya} and Masayoshi Esashi and Shuji Tanaka",
year = "2014",
doi = "10.1109/FCS.2014.6859909",
language = "English",
isbn = "9781479949168",
series = "IFCS 2014 - 2014 IEEE International Frequency Control Symposium, Proceedings",
publisher = "IEEE Computer Society",
booktitle = "IFCS 2014 - 2014 IEEE International Frequency Control Symposium, Proceedings",
note = "2014 IEEE International Frequency Control Symposium, IFCS 2014 ; Conference date: 19-05-2014 Through 22-05-2014",
}