TY - GEN
T1 - Wafer-level vacuum packaging for hetero-integration by thermo-compression bonding using planarized-electroplated gold bumps
AU - Al Farisi, Muhammad Salman
AU - Hirano, Hideki
AU - Tanaka, Shuji
PY - 2016/11/28
Y1 - 2016/11/28
N2 - Wafer-level vacuum sealing and electrical interconnection are often crucial for advanced device packaging. This article presents a novel packaging and integration technology, which is applicable to non-planar (i.e. microstructured) and/or temperature-sensitive wafers, by means of Au-Au low-temperature thermo-compression bonding utilizing electroplated Au microbump that surface has been planarized by single-point diamond fly-cut. Device integration, vacuum encapsulation, and electrical interconnection at the same time is the major advantage offered by the proposed technology. In this study, the sealing pressure was evaluated under various bonding conditions by the zero-balance method utilizing diaphragm-structured devices for bonding test. The vacuum sealing pressure was obtained as a few kPa, or even better without introducing any getter materials. The bonding shear strength was also measured to be higher than 100 MPa.
AB - Wafer-level vacuum sealing and electrical interconnection are often crucial for advanced device packaging. This article presents a novel packaging and integration technology, which is applicable to non-planar (i.e. microstructured) and/or temperature-sensitive wafers, by means of Au-Au low-temperature thermo-compression bonding utilizing electroplated Au microbump that surface has been planarized by single-point diamond fly-cut. Device integration, vacuum encapsulation, and electrical interconnection at the same time is the major advantage offered by the proposed technology. In this study, the sealing pressure was evaluated under various bonding conditions by the zero-balance method utilizing diaphragm-structured devices for bonding test. The vacuum sealing pressure was obtained as a few kPa, or even better without introducing any getter materials. The bonding shear strength was also measured to be higher than 100 MPa.
KW - Au-Au thermo-compression bonding
KW - Hetero-integration
KW - single-point diamond fly-cutting
KW - wafer-level hermetic sealing
KW - zero-balance method
UR - http://www.scopus.com/inward/record.url?scp=85007153693&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85007153693&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2016.7758317
DO - 10.1109/NEMS.2016.7758317
M3 - Conference contribution
AN - SCOPUS:85007153693
T3 - 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
SP - 573
EP - 577
BT - 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Y2 - 17 April 2016 through 20 April 2016
ER -