Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation

Masaki Kurokiba; Takayoshi Ogawa

doi:10.1016/j.jmaa.2007.11.017

Well-posedness for the drift-diffusion system in L^p arising from the semiconductor device simulation

Masaki Kurokiba, Takayoshi Ogawa

SCI - Mathematics

Fukuoka University

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in L^p spaces and will discuss on the global existence.

Original language	English
Pages (from-to)	1052-1067
Number of pages	16
Journal	Journal of Mathematical Analysis and Applications
Volume	342
Issue number	2
DOIs	https://doi.org/10.1016/j.jmaa.2007.11.017
Publication status	Published - 2008 Jun 15

Keywords

A unique time local solution
Drift-diffusion model
Elliptic-parabolic equations
Global solution
Hardy-Littlewood-Sobolev inequality
L spaces
Local well-posedness
Positive solution
Semiconductor device
The initial boundary value problem

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10.1016/j.jmaa.2007.11.017

Cite this

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title = "Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation",

abstract = "We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.",

keywords = "A unique time local solution, Drift-diffusion model, Elliptic-parabolic equations, Global solution, Hardy-Littlewood-Sobolev inequality, L spaces, Local well-posedness, Positive solution, Semiconductor device, The initial boundary value problem",

author = "Masaki Kurokiba and Takayoshi Ogawa",

note = "Funding Information: The authors would like to thank Professor Shinji Odanaka [21] for his advises on the modeling of the real semi-conductor devices. The authors are also grateful to Mr. So Yamada for calling their attention to the semiconductor device models. T. Ogawa{\textquoteright}s work is partially supported by JSPS scientific grant-in-aid basic research B #15340056.",

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doi = "10.1016/j.jmaa.2007.11.017",

language = "English",

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journal = "Journal of Mathematical Analysis and Applications",

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T1 - Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation

AU - Kurokiba, Masaki

AU - Ogawa, Takayoshi

N1 - Funding Information: The authors would like to thank Professor Shinji Odanaka [21] for his advises on the modeling of the real semi-conductor devices. The authors are also grateful to Mr. So Yamada for calling their attention to the semiconductor device models. T. Ogawa’s work is partially supported by JSPS scientific grant-in-aid basic research B #15340056.

PY - 2008/6/15

Y1 - 2008/6/15

N2 - We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.

AB - We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.

KW - A unique time local solution

KW - Drift-diffusion model

KW - Elliptic-parabolic equations

KW - Global solution

KW - Hardy-Littlewood-Sobolev inequality

KW - L spaces

KW - Local well-posedness

KW - Positive solution

KW - Semiconductor device

KW - The initial boundary value problem

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SN - 0022-247X

VL - 342

SP - 1052

EP - 1067

JO - Journal of Mathematical Analysis and Applications

JF - Journal of Mathematical Analysis and Applications

IS - 2

ER -

Well-posedness for the drift-diffusion system in L^p arising from the semiconductor device simulation

Abstract

Keywords

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