TY - JOUR
T1 - Wide band gap semiconductor alloy
T2 - X (LiGa O2)12 - (1-x) ZnO
AU - Omata, Takahisa
AU - Tanaka, Keizo
AU - Tazuke, Atsushi
AU - Nose, Katsuhiro
AU - Otsuka-Yao-Matsuo, Shinya
PY - 2008
Y1 - 2008
N2 - Oxide semiconductor alloys of x (LiGa O2)12 - (1-x) ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x≤0.38 because the Β-LiGa O2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n -type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38 (LiGa O2)12 -0.62ZnO were 8.2 -1 cm-1 and 3.7 eV, respectively, at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes.
AB - Oxide semiconductor alloys of x (LiGa O2)12 - (1-x) ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x≤0.38 because the Β-LiGa O2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n -type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38 (LiGa O2)12 -0.62ZnO were 8.2 -1 cm-1 and 3.7 eV, respectively, at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes.
UR - http://www.scopus.com/inward/record.url?scp=43049107216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43049107216&partnerID=8YFLogxK
U2 - 10.1063/1.2903906
DO - 10.1063/1.2903906
M3 - Article
AN - SCOPUS:43049107216
SN - 0021-8979
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
M1 - 083706
ER -