Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

K. Ohmori; T. Chikyow; T. Hosoi; H. Watanabe; K. Nakajima; T. Adachi; A. Ishikawa; Y. Sugita; Y. Nara; Y. Ohji; K. Shiraishi; K. Yamabe; K. Yamada

doi:10.1109/IEDM.2007.4418942

Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We propose a novel approach to control the effective workfunction (WF) by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage (V_fb) from 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at metal/HfSiON interfaces. Further tunability in V_fb has been examined by employing C-incorporation in the RuMo alloy, thus reducing the crystal grain size and facilitating the control of V _fb for a HfSiON (2nm)/SiO₂(0.7nm)/Si capacitor. These results demonstrate that the crystal structure control in metal gates is essential for realizing the MIS-FET devices with a short gate length in the 32-22 nm node and beyond.

Original language	English
Article number	4418942
Pages (from-to)	345-348
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418942
Publication status	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418942

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Ohmori, K., Chikyow, T., Hosoi, T., Watanabe, H., Nakajima, K., Adachi, T., Ishikawa, A., Sugita, Y., Nara, Y., Ohji, Y., Shiraishi, K., Yamabe, K., & Yamada, K. (2007). Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes. Technical Digest - International Electron Devices Meeting, IEDM, 345-348. [4418942]. https://doi.org/10.1109/IEDM.2007.4418942

Ohmori, K, Chikyow, T, Hosoi, T, Watanabe, H, Nakajima, K, Adachi, T, Ishikawa, A, Sugita, Y, Nara, Y, Ohji, Y, Shiraishi, K, Yamabe, K & Yamada, K 2007, 'Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes', Technical Digest - International Electron Devices Meeting, IEDM, pp. 345-348. https://doi.org/10.1109/IEDM.2007.4418942

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abstract = "We propose a novel approach to control the effective workfunction (WF) by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage (Vfb) from 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at metal/HfSiON interfaces. Further tunability in Vfb has been examined by employing C-incorporation in the RuMo alloy, thus reducing the crystal grain size and facilitating the control of V fb for a HfSiON (2nm)/SiO2(0.7nm)/Si capacitor. These results demonstrate that the crystal structure control in metal gates is essential for realizing the MIS-FET devices with a short gate length in the 32-22 nm node and beyond.",

author = "K. Ohmori and T. Chikyow and T. Hosoi and H. Watanabe and K. Nakajima and T. Adachi and A. Ishikawa and Y. Sugita and Y. Nara and Y. Ohji and K. Shiraishi and K. Yamabe and K. Yamada",

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doi = "10.1109/IEDM.2007.4418942",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting",

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T1 - Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

AU - Ohmori, K.

AU - Chikyow, T.

AU - Hosoi, T.

AU - Watanabe, H.

AU - Nakajima, K.

AU - Adachi, T.

AU - Ishikawa, A.

AU - Sugita, Y.

AU - Nara, Y.

AU - Ohji, Y.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Yamada, K.

PY - 2007

Y1 - 2007

N2 - We propose a novel approach to control the effective workfunction (WF) by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage (Vfb) from 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at metal/HfSiON interfaces. Further tunability in Vfb has been examined by employing C-incorporation in the RuMo alloy, thus reducing the crystal grain size and facilitating the control of V fb for a HfSiON (2nm)/SiO2(0.7nm)/Si capacitor. These results demonstrate that the crystal structure control in metal gates is essential for realizing the MIS-FET devices with a short gate length in the 32-22 nm node and beyond.

AB - We propose a novel approach to control the effective workfunction (WF) by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage (Vfb) from 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at metal/HfSiON interfaces. Further tunability in Vfb has been examined by employing C-incorporation in the RuMo alloy, thus reducing the crystal grain size and facilitating the control of V fb for a HfSiON (2nm)/SiO2(0.7nm)/Si capacitor. These results demonstrate that the crystal structure control in metal gates is essential for realizing the MIS-FET devices with a short gate length in the 32-22 nm node and beyond.

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T2 - 2007 IEEE International Electron Devices Meeting, IEDM

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ER -

Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

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