TY - JOUR
T1 - Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires
AU - Kohda, M.
AU - Ogawa, J.
AU - Shiogai, J.
AU - Matsukura, F.
AU - Ohno, Y.
AU - Ohno, H.
AU - Nitta, J.
N1 - Funding Information:
This work was partly supported by Grants-in-Aids from JSPS/MEXT, SCOPE of the Ministry of Internal Affairs and Communications, and Global COE Programs at Tohoku University , Materials Integration (International Center of Education and Research) and Center of Education and Research for Information Electronics Systems. J. N. acknowledges the Mitsubishi Foundation.
PY - 2010/9
Y1 - 2010/9
N2 - In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 1 0 0 cubic and [-1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.
AB - In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 1 0 0 cubic and [-1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.
KW - (Ga,Mn)As wire
KW - Anisotropic magneto-resistance
KW - Magnetic anisotropy
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U2 - 10.1016/j.physe.2009.12.019
DO - 10.1016/j.physe.2009.12.019
M3 - Article
AN - SCOPUS:77958011836
SN - 1386-9477
VL - 42
SP - 2685
EP - 2689
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 10
ER -