Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

T. Matsukawa; Y. X. Liu; M. Masahara; K. Endo; K. Ishii; H. Yamauchi; E. Sugimata; H. Takashima; S. Kanemaru; E. Suzuki

doi:10.1109/ESSDER.2005.1546597

Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

T. Matsukawa, Y. X. Liu, M. Masahara, K. Endo, K. Ishii, H. Yamauchi, E. Sugimata, H. Takashima, S. Kanemaru, E. Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φ_m) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φ_m of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φ_m uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φ_m by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	109-112
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546597
Publication status	Published - 2005
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 2005 Sept 12 → 2005 Sept 16

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	05/9/12 → 05/9/16

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10.1109/ESSDER.2005.1546597

Cite this

Matsukawa, T., Liu, Y. X., Masahara, M., Endo, K., Ishii, K., Yamauchi, H., Sugimata, E., Takashima, H., Kanemaru, S., & Suzuki, E. (2005). Work function control of metal gates by interdiffused Ni-Ta with high thermal stability. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 109-112). Article 1546597 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546597

@inproceedings{c2e84bbb490e4ba7845068bdf345869f,

title = "Work function control of metal gates by interdiffused Ni-Ta with high thermal stability",

abstract = "By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φm) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φm of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φm uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φm by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.",

author = "T. Matsukawa and Liu, {Y. X.} and M. Masahara and K. Endo and K. Ishii and H. Yamauchi and E. Sugimata and H. Takashima and S. Kanemaru and E. Suzuki",

year = "2005",

doi = "10.1109/ESSDER.2005.1546597",

language = "English",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "109--112",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Matsukawa, T, Liu, YX, Masahara, M, Endo, K, Ishii, K, Yamauchi, H, Sugimata, E, Takashima, H, Kanemaru, S & Suzuki, E 2005, Work function control of metal gates by interdiffused Ni-Ta with high thermal stability. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546597, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 109-112, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 05/9/12. https://doi.org/10.1109/ESSDER.2005.1546597

Work function control of metal gates by interdiffused Ni-Ta with high thermal stability. / Matsukawa, T.; Liu, Y. X.; Masahara, M. et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 109-112 1546597 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

AU - Matsukawa, T.

AU - Liu, Y. X.

AU - Masahara, M.

AU - Endo, K.

AU - Ishii, K.

AU - Yamauchi, H.

AU - Sugimata, E.

AU - Takashima, H.

AU - Kanemaru, S.

AU - Suzuki, E.

PY - 2005

Y1 - 2005

N2 - By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φm) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φm of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φm uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φm by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.

AB - By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φm) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φm of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φm uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φm by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.

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Matsukawa T, Liu YX, Masahara M, Endo K, Ishii K, Yamauchi H et al. Work function control of metal gates by interdiffused Ni-Ta with high thermal stability. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 109-112. 1546597. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2005.1546597

Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

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