Work function of bulk-insulating topological insulator Bi2-                         xSbxTe3-                         ySey

Daichi Takane; Seigo Souma; Takafumi Sato; Takashi Takahashi; Kouji Segawa; Yoichi Ando

doi:10.1063/1.4961987

Work function of bulk-insulating topological insulator Bi_2- _xSb_xTe_3- _ySe_y

Daichi Takane, Seigo Souma, Takafumi Sato, Takashi Takahashi, Kouji Segawa, Yoichi Ando

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Recent discovery of bulk insulating topological insulator (TI) Bi_2- _xSb_xTe_3- _ySe_y paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi_2- _xSb_xTe_3- _ySe_y by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

Original language	English
Article number	091601
Journal	Applied Physics Letters
Volume	109
Issue number	9
DOIs	https://doi.org/10.1063/1.4961987
Publication status	Published - 2016 Aug 29

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title = "Work function of bulk-insulating topological insulator Bi2- xSbxTe3- ySey ",

abstract = "Recent discovery of bulk insulating topological insulator (TI) Bi2- xSbxTe3- ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2- xSbxTe3- ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.",

author = "Daichi Takane and Seigo Souma and Takafumi Sato and Takashi Takahashi and Kouji Segawa and Yoichi Ando",

note = "Funding Information: This work was supported by MEXT of Japan (Innovative Area Topological Materials Science, JP15H05853), JSPS (KAKENHI 15H02105, 26287071, 25287079, and 25220708), and DFG (CRC1238 Control and Dynamics of Quantum Materials,{\^a}€ Projects No. CRC1238-A04). Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4961987",

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T1 - Work function of bulk-insulating topological insulator Bi2- xSbxTe3- ySey

AU - Takane, Daichi

AU - Souma, Seigo

AU - Sato, Takafumi

AU - Takahashi, Takashi

AU - Segawa, Kouji

AU - Ando, Yoichi

N1 - Funding Information: This work was supported by MEXT of Japan (Innovative Area Topological Materials Science, JP15H05853), JSPS (KAKENHI 15H02105, 26287071, 25287079, and 25220708), and DFG (CRC1238 Control and Dynamics of Quantum Materials,â€ Projects No. CRC1238-A04). Publisher Copyright: © 2016 Author(s).

PY - 2016/8/29

Y1 - 2016/8/29

N2 - Recent discovery of bulk insulating topological insulator (TI) Bi2- xSbxTe3- ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2- xSbxTe3- ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

AB - Recent discovery of bulk insulating topological insulator (TI) Bi2- xSbxTe3- ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2- xSbxTe3- ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

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Work function of bulk-insulating topological insulator Bi_2- _xSb_xTe_3- _ySe_y

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