TY - JOUR
T1 - Work function of impurity-doped polycrystalline Si 1-x-y Ge x C y film deposited by ultraclean low-pressure CVD
AU - Shim, Hyunyoung
AU - Sakuraba, Masao
AU - Tsuchiya, Toshiaki
AU - Murota, Junichi
N1 - Funding Information:
The authors wish to express their thanks to Prof. S. Zaima of Nagoya University for his useful discussion. The CVD reactor was provided by Hitachi Kokusai Electric Inc. This study was partially supported by the Public Participation Program for the Promotion of Info. Communications’ Technology R&D from the Telecommunications Advancement Organization of Japan, and a Grant-in-Aid for Priority Area Research B (No. 11232201) and a Grant-in-Aid for Scientific Research A (No. 13355013) from the Ministry of Education, Science, Sports, and Culture of Japan.
PY - 2003/5/15
Y1 - 2003/5/15
N2 - Work function of in situ heavily P- or B-doped poly-Si 1-x-y Ge x C y films were investigated. The poly-Si 1-x-y Ge x C y films were deposited on thermally oxidized Si(100) at 550°C using an ultraclean hot-wall low-pressure chemical vapor deposition system in a SiH 4 -GeH 4 -SiH 3 CH 3 -dopnat (PH 3 or B 2 H 6 ) gas mixture, and the gate-to-substrate work function difference was estimated from flat-band voltage determined by high-frequency capacitance-voltage measurement. With increasing Ge and C fractions, the work function of B-doped poly-Si 1-x-y Ge x C y film decreases, although that of P-doped poly-Si 1-x-y Ge x C y scarcely changes. X-ray diffraction results show that the lattice constant increases with the C fraction, in other words, C is incorporated at interstitial site in the film at least at 550°C. It is suggested that the change in the work function of doped poly-Si 1-x-y Ge x C y is universally explained by the change in the lattice constant as function of the Ge and C fractions.
AB - Work function of in situ heavily P- or B-doped poly-Si 1-x-y Ge x C y films were investigated. The poly-Si 1-x-y Ge x C y films were deposited on thermally oxidized Si(100) at 550°C using an ultraclean hot-wall low-pressure chemical vapor deposition system in a SiH 4 -GeH 4 -SiH 3 CH 3 -dopnat (PH 3 or B 2 H 6 ) gas mixture, and the gate-to-substrate work function difference was estimated from flat-band voltage determined by high-frequency capacitance-voltage measurement. With increasing Ge and C fractions, the work function of B-doped poly-Si 1-x-y Ge x C y film decreases, although that of P-doped poly-Si 1-x-y Ge x C y scarcely changes. X-ray diffraction results show that the lattice constant increases with the C fraction, in other words, C is incorporated at interstitial site in the film at least at 550°C. It is suggested that the change in the work function of doped poly-Si 1-x-y Ge x C y is universally explained by the change in the lattice constant as function of the Ge and C fractions.
KW - Chemical vapor deposition
KW - Metal-oxide-semiconductor (MOS) device
KW - Polycrystalline Si Ge C gate
KW - Work function
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U2 - 10.1016/S0169-4332(03)00079-5
DO - 10.1016/S0169-4332(03)00079-5
M3 - Article
AN - SCOPUS:0037566125
SN - 0169-4332
VL - 212-213
SP - 209
EP - 212
JO - Applied Surface Science
JF - Applied Surface Science
IS - SPEC.
ER -