Wurtzite structure high Mg content ZnMgO thin films deposited by oxygen-plasma enhanced pulsed laser deposition

Yanfei Gu, Xiaomin Li, J. F. Kong, C. Yang, W. Z. Shen, Iun Zuan, W. D. Yu, X. D. Gao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wurtzite structure ZnMgO thin films with the energy gap (Eg) of 4.2 eV were deposited by oxygen-plasma enhanced pulsed laser deposition (PEPLD) on quartz glass. Oxygen-plasma increases the Zn content in ZnMgO thin film, which induced the evolution from cubic to hexagonal structure. The effects of target-substrate (T-S) distance on the band gap and crystal quality of ZnMgO thin film deposited by PEPLD were studied by transmittance spectra and Raman. The band gap of ZnMgO increased from 3.84 eV to 4.03 eV and the crystal quality decrease gradually when the T-S distance decreased from 9 cm to 5 cm.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
DOIs
Publication statusPublished - 2008 Apr 21
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: 2007 Sept 252007 Sept 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6984
ISSN (Print)0277-786X

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/TerritoryChina
CityShanghai
Period07/9/2507/9/28

Keywords

  • Energy gap
  • Oxygen plasma
  • Pulsed laser deposition
  • ZnMgO thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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