TY - JOUR
T1 - Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A
AU - Ohtake, Akihiro
AU - Nakamura, Jun
AU - Terauchi, Masami
AU - Sato, Futami
AU - Tanaka, Michiyoshi
AU - Kimura, Kozo
AU - Yao, Takafumi
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2001/5/1
Y1 - 2001/5/1
N2 - We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the(111)A-orientedsubstrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate.
AB - We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the(111)A-orientedsubstrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate.
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U2 - 10.1103/PhysRevB.63.195325
DO - 10.1103/PhysRevB.63.195325
M3 - Article
AN - SCOPUS:0034907664
SN - 0163-1829
VL - 63
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 19
ER -