Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A

Akihiro Ohtake, Jun Nakamura, Masami Terauchi, Futami Sato, Michiyoshi Tanaka, Kozo Kimura, Takafumi Yao

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the(111)A-orientedsubstrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate.

    Original languageEnglish
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number19
    Publication statusPublished - 2001 May 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics


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