X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators

Takahiko Sasaki, Hajime Oizumi, Naoki Yoneyama, Norio Kobayashi, Naoki Toyota

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators κ-(ET) 2X with X = Cu[N(CN) 2]Cl and Cu 2(CN) 3. For κ-(ET) 2Cu[N(CN) 2]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

Original languageEnglish
Article number123701
JournalJournal of the Physical Society of Japan
Volume76
Issue number12
DOIs
Publication statusPublished - 2007 Dec

Keywords

  • BEDT-TTF
  • Carrier doping
  • Mott insulator
  • Organic conductor
  • X-ray irradiation

Fingerprint

Dive into the research topics of 'X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators'. Together they form a unique fingerprint.

Cite this