X-ray photoelectron diffraction and surface core-level shift study of clean InP (001)

M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, Y. Fukuda, W. R.A. Huff, T. Abukawa, S. Kono, H. W. Yeom, A. Kakizaki

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A clean InP(001) surface treated by ion-bombardment and annealing (IBA) has been studied by X-ray photoelectron diffraction (XPD) and synchrotron radiation based photoemission spectroscopy (SRPES). The XPD pattern of In 3d5/2 (measured at 55° from the surface normal) is compared with a calculated XPD pattern obtained from a single-scattering cluster simulation. Our results indicate that IBA-treated InP(001) exhibits a (2 x 4) surface reconstruction. That is, the two-fold and four-fold directions correspond to the [110] and [110] axes, respectively. For the SRPES study, In 4d core-level spectra (hv = 70 eV) were collected at a variety of photoemission angles. Four spin-orbit doublets were necessary to obtain a high-quality fit to the photoemission spectra. As the detection angle was changed toward the surface parallel, a component having a lower binding energy by 0.70 eV than that of the bulk undergoes a dramatic intensity increase. On the basis of the energy shift and polar angle dependence of this component, we suggest that it arises from surface-layer indium atoms bonded to other indium atoms. The origins of other components are discussed.

Original languageEnglish
Pages (from-to)625-630
Number of pages6
JournalSurface Science
Publication statusPublished - 1998 Sept 3


  • Indium phosphide
  • Low index single crystal surfaces
  • Photoelectron diffraction
  • Semiconductor surfaces
  • Surface structure
  • Synchrotron radiation photoelectron spectroscopy


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