X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

R. Kosugi, S. Sumitani, T. Abukawa, Y. Takakuwa, S. Suzuki, S. Sato, S. Kono

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37 Citations (Scopus)


The Si(001)c(4 × 4)-C surface, which was prepared by exposing a single-domain Si(001)2 × 1 surface to ethylene at a pressure of about 1 × 10-6 mbar at 680°C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C Is showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si1-xCx alloy layers are present.

Original languageEnglish
Pages (from-to)125-131
Number of pages7
JournalSurface Science
Publication statusPublished - 1998 Sept 3


  • Carbide
  • Carbonization
  • Diffusion
  • Ethylene
  • LEED
  • Si(001)
  • X-ray photoelectron diffraction


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