X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

R. Kosugi; S. Sumitani; T. Abukawa; Y. Takakuwa; S. Suzuki; S. Sato; S. Kono

doi:10.1016/S0039-6028(98)00377-X

X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

R. Kosugi, S. Sumitani, T. Abukawa, Y. Takakuwa, S. Suzuki, S. Sato, S. Kono

Tohoku University

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The Si(001)c(4 × 4)-C surface, which was prepared by exposing a single-domain Si(001)2 × 1 surface to ethylene at a pressure of about 1 × 10^-6 mbar at 680°C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C Is showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si_1-xC_x alloy layers are present.

Original language	English
Pages (from-to)	125-131
Number of pages	7
Journal	Surface Science
Volume	412-413
DOIs	https://doi.org/10.1016/S0039-6028(98)00377-X
Publication status	Published - 1998 Sept 3

Keywords

Carbide
Carbonization
Diffusion
Ethylene
LEED
Si(001)
X-ray photoelectron diffraction

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10.1016/S0039-6028(98)00377-X

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title = "X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface",

abstract = "The Si(001)c(4 × 4)-C surface, which was prepared by exposing a single-domain Si(001)2 × 1 surface to ethylene at a pressure of about 1 × 10-6 mbar at 680°C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C Is showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si1-xCx alloy layers are present.",

keywords = "Carbide, Carbonization, Diffusion, Ethylene, LEED, Si(001), X-ray photoelectron diffraction",

author = "R. Kosugi and S. Sumitani and T. Abukawa and Y. Takakuwa and S. Suzuki and S. Sato and S. Kono",

note = "Funding Information: The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of the Electrotechnical Laboratory for providing the well-oriented Si(001) wafers used in this study. This work is partially supported by the New Frontier Program Grant-in-Aid for Scientific Research, #08NP1201 and the Research for the Future Program of JSPS, #RFTF96R15401. ",

year = "1998",

month = sep,

day = "3",

doi = "10.1016/S0039-6028(98)00377-X",

language = "English",

volume = "412-413",

pages = "125--131",

journal = "Surface Science",

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TY - JOUR

T1 - X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

AU - Kosugi, R.

AU - Sumitani, S.

AU - Abukawa, T.

AU - Takakuwa, Y.

AU - Suzuki, S.

AU - Sato, S.

AU - Kono, S.

N1 - Funding Information: The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of the Electrotechnical Laboratory for providing the well-oriented Si(001) wafers used in this study. This work is partially supported by the New Frontier Program Grant-in-Aid for Scientific Research, #08NP1201 and the Research for the Future Program of JSPS, #RFTF96R15401.

PY - 1998/9/3

Y1 - 1998/9/3

N2 - The Si(001)c(4 × 4)-C surface, which was prepared by exposing a single-domain Si(001)2 × 1 surface to ethylene at a pressure of about 1 × 10-6 mbar at 680°C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C Is showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si1-xCx alloy layers are present.

AB - The Si(001)c(4 × 4)-C surface, which was prepared by exposing a single-domain Si(001)2 × 1 surface to ethylene at a pressure of about 1 × 10-6 mbar at 680°C for 600 s, was investigated by X-ray photoelectron diffraction (XPD). The azimuthal-scan XPD patterns of C Is showed pronounced peaks due to the forward-focusing effect in XPD, indicating that the adsorbed carbon diffuses into the substitutional sites of at least the 4th layer below the surface. The anisotropies of the measured XPD patterns are analyzed by single-scattering-cluster (SSC) simulations to find that the highly concentrated Si1-xCx alloy layers are present.

KW - Carbide

KW - Carbonization

KW - Diffusion

KW - Ethylene

KW - LEED

KW - Si(001)

KW - X-ray photoelectron diffraction

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U2 - 10.1016/S0039-6028(98)00377-X

DO - 10.1016/S0039-6028(98)00377-X

M3 - Article

AN - SCOPUS:0032166559

SN - 0039-6028

VL - 412-413

SP - 125

EP - 131

JO - Surface Science

JF - Surface Science

ER -

X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

Abstract

Keywords

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