@article{10140593f71f45a5ab480a255d6cc950,
title = "X-ray photoelectron spectroscopy study of dielectric constant for Si compounds",
abstract = "The authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, Δ E1s -Δ E2p, for various Si compounds using high-resolution high-energy synchrotron radiation. They find that the Δ E1s -Δ E2p values are in very good correlation with the dielectric constant values of the Si compounds. Using this relation, they deduce the local dielectric constant for each of the Si intermediate oxidation states formed at the Si O2 Si interface. The results are in good agreement with values predicted by a first-principles calculation.",
author = "K. Hirose and M. Kihara and D. Kobayashi and H. Okamoto and S. Shinagawa and H. Nohira and E. Ikenaga and M. Higuchi and A. Teramoto and S. Sugawa and T. Ohmi and T. Hattori",
note = "Funding Information: The authors express sincere thanks to K. Kobayashi and Y. Tamenori from JASRI/SPring-8 and Y. Takata and S. Shin from RIKEN/SPring-8 for their help in the present study. The synchrotron radiation experiments were performed at SPring-8 with the approval of Japan Synchrotron Radiation Research Institute as a Nanotechnology Support Project of The Ministry of Education, Culture, Sports, Science and Technology. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research (A) (15206006) and (C) (15560025), (B) (18360026), and partially by the Ministry of Economy, Trade and Industry and the New Energy and Industrial Technology Development.",
year = "2006",
doi = "10.1063/1.2361177",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "15",
}