X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces

K. Hirose; H. Nohira; D. Kobayashi; T. Hattori

doi:10.1109/ICSICT.2006.306254

X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces

K. Hirose, H. Nohira, D. Kobayashi, T. Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First we measure the difference of core-level binding energy shifts for Si Is and Si 2p, ΔE_1s - ΔE _2p, for various Si compounds using high-resolution high-energy synchrotron radiation. We find that the ΔE_1s - ΔE _2p values are in very good correlation with the dielectric constant values of the Si compounds. Then, using this relation, we deduce the local dielectric constant for ultrathin SiO₂ film formed on Si substrates. The results are in good agreement with values predicted by a first-principles calculation.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	368-371
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306254
Publication status	Published - 2006
Externally published	Yes
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	06/10/23 → 06/10/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306254

Cite this

Hirose, K., Nohira, H., Kobayashi, D., & Hattori, T. (2006). X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 368-371). [4098111] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306254

X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces. / Hirose, K.; Nohira, H.; Kobayashi, D. et al.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 368-371 4098111 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirose, K, Nohira, H, Kobayashi, D & Hattori, T 2006, X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098111, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 368-371, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06/10/23. https://doi.org/10.1109/ICSICT.2006.306254

Hirose K, Nohira H, Kobayashi D, Hattori T. X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 368-371. 4098111. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306254

Hirose, K. ; Nohira, H. ; Kobayashi, D. et al. / X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 368-371 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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title = "X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces",

abstract = "We propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First we measure the difference of core-level binding energy shifts for Si Is and Si 2p, ΔE1s - ΔE 2p, for various Si compounds using high-resolution high-energy synchrotron radiation. We find that the ΔE1s - ΔE 2p values are in very good correlation with the dielectric constant values of the Si compounds. Then, using this relation, we deduce the local dielectric constant for ultrathin SiO2 film formed on Si substrates. The results are in good agreement with values predicted by a first-principles calculation.",

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N2 - We propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First we measure the difference of core-level binding energy shifts for Si Is and Si 2p, ΔE1s - ΔE 2p, for various Si compounds using high-resolution high-energy synchrotron radiation. We find that the ΔE1s - ΔE 2p values are in very good correlation with the dielectric constant values of the Si compounds. Then, using this relation, we deduce the local dielectric constant for ultrathin SiO2 film formed on Si substrates. The results are in good agreement with values predicted by a first-principles calculation.

AB - We propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First we measure the difference of core-level binding energy shifts for Si Is and Si 2p, ΔE1s - ΔE 2p, for various Si compounds using high-resolution high-energy synchrotron radiation. We find that the ΔE1s - ΔE 2p values are in very good correlation with the dielectric constant values of the Si compounds. Then, using this relation, we deduce the local dielectric constant for ultrathin SiO2 film formed on Si substrates. The results are in good agreement with values predicted by a first-principles calculation.

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X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces

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