X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300°C

M. Shioji; T. Shiraishi; K. Takahashi; H. Nohira; K. Azuma; Y. Nakata; Y. Takata; S. Shin; K. Kobayashi; T. Hattori

doi:10.1063/1.1737793

X-ray photoelectron spectroscopy study on SiO₂/Si interface structures formed by three kinds of atomic oxygen at 300°C

M. Shioji, T. Shiraishi, K. Takahashi, H. Nohira, K. Azuma, Y. Nakata, Y. Takata, S. Shin, K. Kobayashi, T. Hattori

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The SiO₂/Si interface structures, interface state densities and uniformities of oxide films formed by three kinds of atomic oxygen at 300 °C, were investigated. The x-ray photoelectron spectroscopy and energy loss spectroscopy analysis were used for the study. The uniformity of the films were found to be strongly dependent on the oxidation process, while the total amount of suboxides was found to be weakly dependent on the oxidation process. It was also observed that the photo-oxide/Si interface mainly consisted of Si ¹⁺ and Si³⁺, which indicated that the SiO₂/Si interface was covered by {111} facets.

Original language	English
Pages (from-to)	3756-3758
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1737793
Publication status	Published - 2004 May 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{6b566cb74eeb4b7a8d663870f6021ef5,

title = "X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300°C",

abstract = "The SiO2/Si interface structures, interface state densities and uniformities of oxide films formed by three kinds of atomic oxygen at 300 °C, were investigated. The x-ray photoelectron spectroscopy and energy loss spectroscopy analysis were used for the study. The uniformity of the films were found to be strongly dependent on the oxidation process, while the total amount of suboxides was found to be weakly dependent on the oxidation process. It was also observed that the photo-oxide/Si interface mainly consisted of Si 1+ and Si3+, which indicated that the SiO2/Si interface was covered by {111} facets.",

author = "M. Shioji and T. Shiraishi and K. Takahashi and H. Nohira and K. Azuma and Y. Nakata and Y. Takata and S. Shin and K. Kobayashi and T. Hattori",

year = "2004",

month = may,

day = "10",

doi = "10.1063/1.1737793",

language = "English",

volume = "84",

pages = "3756--3758",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300°C

AU - Shioji, M.

AU - Shiraishi, T.

AU - Takahashi, K.

AU - Nohira, H.

AU - Azuma, K.

AU - Nakata, Y.

AU - Takata, Y.

AU - Shin, S.

AU - Kobayashi, K.

AU - Hattori, T.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The SiO2/Si interface structures, interface state densities and uniformities of oxide films formed by three kinds of atomic oxygen at 300 °C, were investigated. The x-ray photoelectron spectroscopy and energy loss spectroscopy analysis were used for the study. The uniformity of the films were found to be strongly dependent on the oxidation process, while the total amount of suboxides was found to be weakly dependent on the oxidation process. It was also observed that the photo-oxide/Si interface mainly consisted of Si 1+ and Si3+, which indicated that the SiO2/Si interface was covered by {111} facets.

AB - The SiO2/Si interface structures, interface state densities and uniformities of oxide films formed by three kinds of atomic oxygen at 300 °C, were investigated. The x-ray photoelectron spectroscopy and energy loss spectroscopy analysis were used for the study. The uniformity of the films were found to be strongly dependent on the oxidation process, while the total amount of suboxides was found to be weakly dependent on the oxidation process. It was also observed that the photo-oxide/Si interface mainly consisted of Si 1+ and Si3+, which indicated that the SiO2/Si interface was covered by {111} facets.

UR - http://www.scopus.com/inward/record.url?scp=2942578190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942578190&partnerID=8YFLogxK

U2 - 10.1063/1.1737793

DO - 10.1063/1.1737793

M3 - Article

AN - SCOPUS:2942578190

SN - 0003-6951

VL - 84

SP - 3756

EP - 3758

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

X-ray photoelectron spectroscopy study on SiO₂/Si interface structures formed by three kinds of atomic oxygen at 300°C

Abstract

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