XPS analysis of carrier trapping phenomena in ultrathin SiO 2 film formed on Si substrate

K. Hirose, S. Kawashiri, T. Hattori

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)


    We have developed an XPS time-dependent measurement technique with which we can address serious reliability issues in metal-oxide-semiconductor field-effect transistors (MOSFETs). By using this technique, we determined the density of hole traps in ultrathin SiO 2 films without making electrodes for electrical measurements. In this paper, we demonstrate a new application of this method to analysis of the electron trapping and interface states generation during electron-beam irradiation. We found that the Si 2p peak binding energy of a n-type Si substrate covered with a SiO 2 film (0.8nm) decreases to a saturation value during electron-beam (0.5eV: only electron injection case) irradiation. From the shift of the Si 2p peak binding energy, we were able to obtain the electron trap density of the SiO 2 film. On the other hand, the binding energy first increases, then decreases to a saturation energy, smaller than the initial value, during electron-beam (6eV: both electron and hole injection case) irradiation. The complex phenomena are discussed in connection with interface states generation at SiO 2 /Si interfaces.

    Original languageEnglish
    Pages (from-to)202-206
    Number of pages5
    JournalApplied Surface Science
    Issue number1-4
    Publication statusPublished - 2004 Jul 15
    EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
    Duration: 2003 Sept 152003 Sept 19


    • Crystalline-amorphous interfaces
    • Insulating films
    • Semiconductor-insulator interfaces
    • Silicon
    • Silicon oxides
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films


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