TY - JOUR
T1 - XPS study of the reaction of the Si(100) surface with a C 2 H 4 beam
AU - Takagaki, T.
AU - Igari, Y.
AU - Takaoka, T.
AU - Kusunoki, I.
N1 - Funding Information:
We would like to thank Professor J.R. Anderson for the careful revision of the manuscript. This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science, and Culture of Japan.
PY - 1996/2
Y1 - 1996/2
N2 - The carbide layers produced by reaction of a Si(100) surface with a C 2 H 4 beam were analyzed by high resolution X-ray photoelectron spectroscopy (XPS). It was found that the reaction occurs above ∼ 600°C. The growth rate of the carbide layer at a beam flux of 2.7 × 10 15 molecules cm -2 s -1 increased with the surface temperature up to 675°C, and then decreased with increasing the temperature. This phenomenon is explained in terms of the surface residence time of the incident molecules and the diffusion rate of the Si atoms from the substrate to the surface.
AB - The carbide layers produced by reaction of a Si(100) surface with a C 2 H 4 beam were analyzed by high resolution X-ray photoelectron spectroscopy (XPS). It was found that the reaction occurs above ∼ 600°C. The growth rate of the carbide layer at a beam flux of 2.7 × 10 15 molecules cm -2 s -1 increased with the surface temperature up to 675°C, and then decreased with increasing the temperature. This phenomenon is explained in terms of the surface residence time of the incident molecules and the diffusion rate of the Si atoms from the substrate to the surface.
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U2 - 10.1016/0169-4332(95)00243-X
DO - 10.1016/0169-4332(95)00243-X
M3 - Article
AN - SCOPUS:0030562341
SN - 0169-4332
VL - 92
SP - 287
EP - 290
JO - Applied Surface Science
JF - Applied Surface Science
ER -