Ybco artificial grain boundary junctions on si

J. Chen; T. Yamashita; H. Suzuki; H. Myoren; K. Nakajima; Y. Osaka

doi:10.1109/77.233434

Ybco artificial grain boundary junctions on si

J. Chen, T. Yamashita, H. Suzuki, H. Myoren, K. Nakajima, Y. Osaka

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Letter › peer-review

1 Citation (Scopus)

Abstract

Si bicrystal substrates with different misorientation angles were fabricated using the hot-press method and their qualities were examined by SEM, TEM and XRD. YBa2Cu307-s(YBCO) epitaxial thin films were grown on such substrates by if magnetron sputtering, with yttria (Y2O3) and yttria-stabilized zirconia(YSZ) as the buffer layers. The properties of bridge type junctions patterned on the film by an excimer laser were studied from 4.2K to 77K. It was found that the critical current density of the artificial grain boundary(AGB) junction (JqA) was always less than that of the junction made on Si single-crystal grains (JcG)- The ratio JcA/JcG decreased exponentially as the misorientation angle(8) was increased. The effect of temperature and microwave irradiation showed that the properties of AGB junctions with θ<5° were limited by flux creep. In contrast, AGB junctions with θ≤10° showed the Josephson effect. Clear Shapiro steps and Josephson mixing were observed at 77K.

Original language	English
Pages (from-to)	2333-2336
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	3
Issue number	1
DOIs	https://doi.org/10.1109/77.233434
Publication status	Published - 1993 Mar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{5049233e316a49eeac2d20b1e0ab1599,

title = "Ybco artificial grain boundary junctions on si",

abstract = "Si bicrystal substrates with different misorientation angles were fabricated using the hot-press method and their qualities were examined by SEM, TEM and XRD. YBa2Cu307-s(YBCO) epitaxial thin films were grown on such substrates by if magnetron sputtering, with yttria (Y2O3) and yttria-stabilized zirconia(YSZ) as the buffer layers. The properties of bridge type junctions patterned on the film by an excimer laser were studied from 4.2K to 77K. It was found that the critical current density of the artificial grain boundary(AGB) junction (JqA) was always less than that of the junction made on Si single-crystal grains (JcG)- The ratio JcA/JcG decreased exponentially as the misorientation angle(8) was increased. The effect of temperature and microwave irradiation showed that the properties of AGB junctions with θ<5° were limited by flux creep. In contrast, AGB junctions with θ≤10° showed the Josephson effect. Clear Shapiro steps and Josephson mixing were observed at 77K.",

author = "J. Chen and T. Yamashita and H. Suzuki and H. Myoren and K. Nakajima and Y. Osaka",

year = "1993",

month = mar,

doi = "10.1109/77.233434",

language = "English",

volume = "3",

pages = "2333--2336",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Ybco artificial grain boundary junctions on si

AU - Chen, J.

AU - Yamashita, T.

AU - Suzuki, H.

AU - Myoren, H.

AU - Nakajima, K.

AU - Osaka, Y.

PY - 1993/3

Y1 - 1993/3

N2 - Si bicrystal substrates with different misorientation angles were fabricated using the hot-press method and their qualities were examined by SEM, TEM and XRD. YBa2Cu307-s(YBCO) epitaxial thin films were grown on such substrates by if magnetron sputtering, with yttria (Y2O3) and yttria-stabilized zirconia(YSZ) as the buffer layers. The properties of bridge type junctions patterned on the film by an excimer laser were studied from 4.2K to 77K. It was found that the critical current density of the artificial grain boundary(AGB) junction (JqA) was always less than that of the junction made on Si single-crystal grains (JcG)- The ratio JcA/JcG decreased exponentially as the misorientation angle(8) was increased. The effect of temperature and microwave irradiation showed that the properties of AGB junctions with θ<5° were limited by flux creep. In contrast, AGB junctions with θ≤10° showed the Josephson effect. Clear Shapiro steps and Josephson mixing were observed at 77K.

AB - Si bicrystal substrates with different misorientation angles were fabricated using the hot-press method and their qualities were examined by SEM, TEM and XRD. YBa2Cu307-s(YBCO) epitaxial thin films were grown on such substrates by if magnetron sputtering, with yttria (Y2O3) and yttria-stabilized zirconia(YSZ) as the buffer layers. The properties of bridge type junctions patterned on the film by an excimer laser were studied from 4.2K to 77K. It was found that the critical current density of the artificial grain boundary(AGB) junction (JqA) was always less than that of the junction made on Si single-crystal grains (JcG)- The ratio JcA/JcG decreased exponentially as the misorientation angle(8) was increased. The effect of temperature and microwave irradiation showed that the properties of AGB junctions with θ<5° were limited by flux creep. In contrast, AGB junctions with θ≤10° showed the Josephson effect. Clear Shapiro steps and Josephson mixing were observed at 77K.

UR - http://www.scopus.com/inward/record.url?scp=0027557562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027557562&partnerID=8YFLogxK

U2 - 10.1109/77.233434

DO - 10.1109/77.233434

M3 - Letter

AN - SCOPUS:0027557562

SN - 1051-8223

VL - 3

SP - 2333

EP - 2336

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 1

ER -

Ybco artificial grain boundary junctions on si

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