ZnCdSe/ZnSe quantum-well laser diode on a (711)A GaAs substrate

Tetsuichiro Ohno, Yoshihiro Kawaguchi, Akira Ohki, Takashi Matsuoka

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11 Citations (Scopus)


For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-μm-long cavity, and a 20-μm stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.

Original languageEnglish
Pages (from-to)5766-5773
Number of pages8
JournalJapanese Journal of Applied Physics
Issue number10
Publication statusPublished - 1994 Oct


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