TY - JOUR
T1 - ZnCdSe/ZnSe quantum-well laser diode on a (711)A GaAs substrate
AU - Ohno, Tetsuichiro
AU - Kawaguchi, Yoshihiro
AU - Ohki, Akira
AU - Matsuoka, Takashi
PY - 1994/10
Y1 - 1994/10
N2 - For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-μm-long cavity, and a 20-μm stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.
AB - For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-μm-long cavity, and a 20-μm stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.
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M3 - Article
AN - SCOPUS:0028530806
SN - 0021-4922
VL - 33
SP - 5766
EP - 5773
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10
ER -