ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang; X. M. Li; Y. F. Gu; W. D. Yu; X. D. Gao; Y. W. Zhang

doi:10.1063/1.2987420

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang, X. M. Li, Y. F. Gu, W. D. Yu, X. D. Gao, Y. W. Zhang

Creative Interdisciplinary Research Division

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81 Citations (Scopus)

Abstract

ZnO based oxide system Zn_1-x-yBe_xMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

Original language	English
Article number	112114
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2987420
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2987420

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title = "ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV",

abstract = "ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.",

author = "C. Yang and Li, {X. M.} and Gu, {Y. F.} and Yu, {W. D.} and Gao, {X. D.} and Zhang, {Y. W.}",

note = "Funding Information: This work was sponsored by the Ministry of Science and Technology of China through the Hi-Tech Research and Development Program of China (Grant No. 2006AA03Z308).",

year = "2008",

doi = "10.1063/1.2987420",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

AU - Yang, C.

AU - Li, X. M.

AU - Gu, Y. F.

AU - Yu, W. D.

AU - Gao, X. D.

AU - Zhang, Y. W.

N1 - Funding Information: This work was sponsored by the Ministry of Science and Technology of China through the Hi-Tech Research and Development Program of China (Grant No. 2006AA03Z308).

PY - 2008

Y1 - 2008

N2 - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

AB - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

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DO - 10.1063/1.2987420

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JF - Applied Physics Letters

IS - 11

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ER -

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

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