ZnO epilayers on GaN templates: Polarity control and valence-band offset

Soon Ku Hong; Takashi Kanada; Hisao Makino; Hang Ju Ko; Yefan Chen; Takafumi Yao; Akinori Tanaka; Hiroyuki Sasaki; Shigeru Sato; Daisuke Imai; Kiyoaki Araki; Makoto Shinohara

doi:10.1116/1.1374630

ZnO epilayers on GaN templates: Polarity control and valence-band offset

Soon Ku Hong, Takashi Kanada, Hisao Makino, Hang Ju Ko, Yefan Chen, Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, Shigeru Sato, Daisuke Imai, Kiyoaki Araki, Makoto Shinohara

IMR - Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

35 Citations (Scopus)

Abstract

Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga₂O₃.

Original language	English
Pages (from-to)	1429-1433
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1374630
Publication status	Published - 2001 Jul
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 2000 Oct 15 → 2000 Oct 18

Access to Document

10.1116/1.1374630

Cite this

@article{b642a4c3ee5440f7bc63b0b20e94d778,

title = "ZnO epilayers on GaN templates: Polarity control and valence-band offset",

abstract = "Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.",

author = "Hong, {Soon Ku} and Takashi Kanada and Hisao Makino and Ko, {Hang Ju} and Yefan Chen and Takafumi Yao and Akinori Tanaka and Hiroyuki Sasaki and Shigeru Sato and Daisuke Imai and Kiyoaki Araki and Makoto Shinohara",

year = "2001",

month = jul,

doi = "10.1116/1.1374630",

language = "English",

volume = "19",

pages = "1429--1433",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

}

TY - JOUR

T1 - ZnO epilayers on GaN templates

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

AU - Hong, Soon Ku

AU - Kanada, Takashi

AU - Makino, Hisao

AU - Ko, Hang Ju

AU - Chen, Yefan

AU - Yao, Takafumi

AU - Tanaka, Akinori

AU - Sasaki, Hiroyuki

AU - Sato, Shigeru

AU - Imai, Daisuke

AU - Araki, Kiyoaki

AU - Shinohara, Makoto

PY - 2001/7

Y1 - 2001/7

N2 - Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.

AB - Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.

UR - http://www.scopus.com/inward/record.url?scp=0035535282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035535282&partnerID=8YFLogxK

U2 - 10.1116/1.1374630

DO - 10.1116/1.1374630

M3 - Conference article

AN - SCOPUS:0035535282

SN - 1071-1023

VL - 19

SP - 1429

EP - 1433

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

Y2 - 15 October 2000 through 18 October 2000

ER -

ZnO epilayers on GaN templates: Polarity control and valence-band offset

Abstract

Access to Document

Other files and links

Fingerprint

Cite this