ZnO epilayers on GaN templates: Polarity control and valence-band offset

Soon Ku Hong, Takashi Kanada, Hisao Makino, Hang Ju Ko, Yefan Chen, Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, Shigeru Sato, Daisuke Imai, Kiyoaki Araki, Makoto Shinohara

Research output: Contribution to journalConference articlepeer-review

35 Citations (Scopus)


Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.

Original languageEnglish
Pages (from-to)1429-1433
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 2001 Jul
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: 2000 Oct 152000 Oct 18


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