ZnTe-Based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Hanada, T. Yao

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


We have investigated the ZnTe-based material system for the application to light-emitting devices. To this end, ZnTe homoepitaxy techniques have been developed to grow high-quality epitaxial layers. The conductivity control of ZnTe and ZnMgSeTe layers have been investigated. High structural quality n-type ZnTe layers with high carrier concentration are achieved by aluminum doping. Ambipolar conductivity control of quaternary layers is achieved. Aluminum doped ZnMgSeTe layers show a net carrier concentration of 5 × 1016 cm-3, while a high hole concentration of 2.5 × 1019 cm-3 is achieved by p-type doping using a nitrogen plasma source. Based on those results, Zn1-xCdxTe/ZnMgSeTe triple-quantum-well(TQW) LED structures were fabricated. Bright electroluminescence was obtained at room temperature at the wavelength of 604 nm from Zn0.7Cd0.3Te and at 566 nm from Zn0.85Cd0.15Te TQW-LED.

Original languageEnglish
Pages (from-to)995-999
Number of pages5
JournalPhysica Status Solidi (B): Basic Research
Issue number2
Publication statusPublished - 2002


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