年別の研究成果
年別の研究成果
フィンガープリント
Hiroki Koikeが活動している研究トピックを掘り下げます。このトピックラベルは、この研究者の研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。
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ネットワーク
国/地域レベルにおける最近の外部共同研究。点をクリックして詳細を開くか、または
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Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
Watanabe, K., Shimada, T., Hirose, K., Shindo, H., Kobayashi, D., Tanigawa, T., Ikeda, S., Shinada, T., Koike, H., Endoh, T., Makino, T. & Ohshima, T., 2022, 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. P541-P545 (IEEE International Reliability Physics Symposium Proceedings; vol. 2022-March).研究成果: Conference contribution
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40 nm 1T-1MTJ 128 Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design
Koike, H., Tanigawa, T., Watanabe, T., Nasuno, T., Noguchi, Y., Yasuhira, M., Yoshiduka, T., Ma, Y., Honjo, H., Nishioka, K., Miura, S., Inoue, H., Ikeda, S. & Endoh, T., 2021 3月, In: IEEE Transactions on Magnetics. 57, 3, 9260242.研究成果: Article › 査読
3 被引用数 (Scopus) -
Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice
Koike, H., Tanigawa, T., Watanabe, T., Nasuno, T., Noguchi, Y., Yasuhira, M., Yoshiduka, T., Ma, Y., Honjo, H., Nishioka, K., Miura, S., Inoue, H., Ikeda, S. & Endoh, T., 2020 8月 17, 2020 IEEE 31st Magnetic Recording Conference, TMRC 2020. Institute of Electrical and Electronics Engineers Inc., 9366711. (2020 IEEE 31st Magnetic Recording Conference, TMRC 2020).研究成果: Conference contribution
3 被引用数 (Scopus) -
12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz
Natsui, M., Suzuki, D., Tamakoshi, A., Watanabe, T., Honjo, H., Koike, H., Nasuno, T., Ma, Y., Tanigawa, T., Noguchi, Y., Yasuhira, M., Sato, H., Ikeda, S., Ohno, H., Endoh, T. & Hanyu, T., 2019 3月 6, 2019 IEEE International Solid-State Circuits Conference, ISSCC 2019. Institute of Electrical and Electronics Engineers Inc., p. 202-204 3 p. 8662431. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; vol. 2019-February).研究成果: Conference contribution
16 被引用数 (Scopus) -
14ns write speed 128Mb density Embedded STT-MRAM with endurance>10 10 and 10yrs retention@85°C using novel low damage MTJ integration process
Sato, H., Honjo, H., Watanabe, T., Niwa, M., Koike, H., Miura, S., Saito, T., Inoue, H., Nasuno, T., Tanigawa, T., Noguchi, Y., Yoshiduka, T., Yasuhira, M., Ikeda, S., Kang, S. Y., Kubo, T., Yamashita, K., Yagi, Y., Tamura, R. & Endoh, T., 2019 1月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 27.2.1-27.2.4 8614606. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).研究成果: Conference contribution
18 被引用数 (Scopus)